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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions
TL;DR: In this article, the authors point out that the time to breakdown (t/sub BD/) of silicon dioxide has a pronounced frequency dependence when it is measured under bipolar bias conditions and propose two different mechanisms to explain the frequency-dependent spreading of the trapped hole distribution away from the interface.
Proceedings ArticleDOI
Prospect of tunneling green transistor for 0.1V CMOS
Chenming Hu,Pratik Patel,Anupama Bowonder,Kanghoon Jeon,Sung Hwan Kim,Wei-Yip Loh,Chang Yong Kang,Jungwoo Oh,Prashant Majhi,Ali Javey,Tiehui Liu,Raj Jammy +11 more
TL;DR: In this article, a tunneling green transistor was designed to enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8″ wafers.
Journal ArticleDOI
Projecting interconnect electromigration lifetime for arbitrary current waveforms
TL;DR: In this article, a vacancy-relaxation model is proposed to predict the DC lifetime, pulse DC (arbitrary unidirectional waveform) lifetime, pure AC lifetime, and AC-plus-DC bias lifetime for all waveforms and all frequencies above 1 kHz.
Journal ArticleDOI
Thin oxide charging current during plasma etching of aluminum
TL;DR: In this article, the authors measured 10-pA/m/m of the charging current of Al etch process on a given antenna geometry and predicted the impact on oxide integrity and interface stability.
Journal ArticleDOI
Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages
TL;DR: In this paper, the universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field E eff = (ηQ inv + Q b ) ϵ Si has been re-examined.