C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Switch-induced error voltage on a switched capacitor
Bing J. Sheu,Chenming Hu +1 more
TL;DR: In this paper, a concise analytical expression for switch-induced error voltage on a switched capacitor is derived from the distributed MOSFET model, which can be interpreted in terms of a simple lumped equivalent circuit.
Proceedings ArticleDOI
Si tunnel transistors with a novel silicided source and 46mV/dec swing
Kanghoon Jeon,Wei-Yip Loh,Pratik Patel,Chang Yong Kang,Jungwoo Oh,Anupama Bowonder,Chanro Park,Chan-Gyeong Park,Casey Smith,Prashant Majhi,Hsing-Huang Tseng,Raj Jammy,Tiehui Liu,Chenming Hu +13 more
TL;DR: In this paper, a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation was reported.
Journal ArticleDOI
A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation
TL;DR: In this paper, a new mode of operation for Silicon-On-Insulator (SOI) MOSFETs is experimentally investigated, which gives rise to a Dynamic Threshold voltage MOSFLET (DTMOS).
Journal ArticleDOI
Dual work function metal gate CMOS technology using metal interdiffusion
TL;DR: In this article, a metal-gate CMOS technology was proposed that uses a combination of two metals to achieve low threshold voltages for both n- and p-MOSFET's.
Journal ArticleDOI
Electrical Breakdown in Thin Gate and Tunneling Oxides
TL;DR: In this article, a quantitative model for oxide breakdown based on impact ionization and hole trapping at the cathode is presented and shown to agree well with the experimental J - t and time-to-breakdown, (t/sub BD/) results.