Chenming Hu

TL;DR: In this paper, the influence of Ti top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as bottom electrode was investigated and the experimental results imply that switching the device into high conducting state is a field driven process while switching back into low conducting state was a current driven process.

TL;DR: In this article, a capacitorless, asymmetric double-gate DRAM (DG-DRAM) design is investigated and the soft error problems are discussed. But careful attention to cell geometry and film quality results in intrinsic retention times suitable for stand-alone and embedded memories.

TL;DR: Physical phenomena underlying failure due to electromigration and stress-induced voiding in fine Al and Al-alloy thin-film conducting lines are examined in the context of accelerated testing methods and structures.

TL;DR: In this paper, a correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests, suggesting that the leakage may be a result of the oxide-trap assisted tunneling.

TL;DR: In this paper, the dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surfaces.