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Chenming Hu

Researcher at University of California, Berkeley

Publications -  1300
Citations -  60963

Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.

Papers
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Journal ArticleDOI

Molybdenum gate electrode technology for deep sub-micron CMOS generations

TL;DR: In this paper, the dependence of the interfacial work function on the nitrogen implant parameters (viz. energy and dose) is discussed, and the ability to engineer the Mo gate work function over a relatively large range makes it an attractive candidate for this application.
Proceedings ArticleDOI

16nm functional 0.039µm 2 6T-SRAM cell with nano injection lithography, nanowire channel, and full TiN gate

TL;DR: In this paper, a 6T-SRAM cell was successfully achieved with a novel nano injection Lithography (NIL) technique and dynamic Vdd regulator (DVR), which is not only maskless for minimizing entry cost but also photoresist free to enhance pattern resolution.
Patent

Dynamic threshold voltage mosfet for ultra-low voltage operation

TL;DR: In this paper, a dynamic threshold voltage IGFET such as a MOSFET is shown to be operable at voltages of 0.6 volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located.
Journal ArticleDOI

Spice up your MOSFET modelling

TL;DR: A customizable and predictive BSIM model has been generated for devices with L/sub eff/ down to 12 nm and a wide range of interconnect sizes and the main advantages are its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model.