C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Proceedings ArticleDOI
Toward a practical computer-aid for thyristor circuit design
Chenming Hu,Waiman F. Ki +1 more
TL;DR: It is shown that using only thyristor data sheets and a popular, easy-to-use circuit simulation program (SPICE) readily available to the public one can perform thyristar circuit simulations as a design aid.
Patent
Transistor with a strained region and method of manufacture
TL;DR: A transistor structure comprises a channel region overlying a substrate region The substrate region comprises a first semiconductor material with a first lattice constant, and the channel region comprises an additional semiconductor with a second lattice constants as discussed by the authors.
Patent
Structure and method of forming integrated circuits utilizing strained channel transistors
TL;DR: In this article, the second component can be a second transistor having a conductivity type differing from the first transistor or a resistor, which is coupled to the transistor to form a circuit, e.g., an inverter.
Journal ArticleDOI
Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs
Yen-Kai Lin,Harshit Agarwal,Pragya Kushwaha,Ming-Yen Kao,Yu-Hung Liao,Korok Chatterjee,Sayeef Salahuddin,Chenming Hu +7 more
TL;DR: In this paper, the impact of inner fringing fields on the negative capacitance FinFET (NC-FinFET) and how this scales with the technology node was investigated.
Journal ArticleDOI
Plasma charging damage on ultrathin gate oxides
Donggun Park,Chenming Hu +1 more
TL;DR: In this paper, gate oxide thickness was analyzed to study the plasma charging damage by the metal etching process and it was shown that gate oxide has better immunity to plasma charging than the thicker oxide, thanks to the excellent tolerance of the thin gate oxide to tunneling current.