C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
More filters
Proceedings ArticleDOI
Body self bias in fully depleted and non-fully depleted SOI devices
TL;DR: In this paper, a model was developed to predict the body potentials of both fully depleted (FD) and non-fully depleted (NE) SOI devices, and the authors found that contrary to general belief the kink anomaly also occurs in FD SOI.
Journal ArticleDOI
Reliability phenomena under AC stress
TL;DR: In this paper, the authors reviewed the AC effects in hot-electron effect, electromigration, and gate oxide breakdown and stability and showed that AC effects become important to setting realistic reliability acceptance criteria and predicting circuit reliability as technology scaling gradually erodes the margin of safety.
Proceedings ArticleDOI
Air spacer MOSFET technology for 20nm node and beyond
Jemin Park,Chenming Hu +1 more
TL;DR: In this article, two types of air spacer technologies are proposed and TCAD simulation is used to construct 20 nm-gate transistor, one is non-SAC (Self Aligned Contact) process with air spacers, and the other is SAC process with Air spacer.
Journal ArticleDOI
A Density Metric for Semiconductor Technology [Point of View]
H.-S. Philip Wong,Kerem Akarvardar,Dimitri A. Antoniadis,Jeffrey Bokor,Chenming Hu,Tsu-Jae King-Liu,Subhasish Mitra,James D. Plummer,Sayeef Salahuddin +8 more
TL;DR: The proposed density metric can be used to gauge advances in future generations of semi-conductor technologies in a holistic way, by accounting for the progress in logic, memory, and packaging/integration technologies simultaneously.
Journal ArticleDOI
Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide
TL;DR: In this paper, the electrical characteristics of MOSFETs and MOS capacitors utilizing thin (80-230 AA) low-pressure chemical-vapor-deposited (LPCVD) oxide films deposited at 12 AA/min are presented.