C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Enhanced ferroelectricity in ultrathin films grown directly on silicon.
Suraj Cheema,Daewoong Kwon,Daewoong Kwon,Nirmaan Shanker,Roberto dos Reis,Shang-Lin Hsu,Shang-Lin Hsu,Jun Xiao,Haigang Zhang,Ryan Wagner,Adhiraj Datar,Margaret McCarter,Claudy Serrao,Ajay K. Yadav,Golnaz Karbasian,Cheng-Hsiang Hsu,Ava J. Tan,Li Chen Wang,Vishal Thakare,Xiang Zhang,Apurva Mehta,Evguenia Karapetrova,Rajesh V. Chopdekar,Padraic Shafer,Elke Arenholz,Elke Arenholz,Chenming Hu,Roger Proksch,Ramamoorthy Ramesh,Jim Ciston,Sayeef Salahuddin,Sayeef Salahuddin +31 more
TL;DR: This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which ‘reverse’ size effects counterintuitively stabilize polar symmetry in the ultrathin regime.
Journal ArticleDOI
Electrical breakdown in thin gate and tunneling oxides
TL;DR: In this article, a quantitative model for oxide breakdown based on impact ionization and hole trapping at the cathode is presented and shown to agree well with the experimental J - t and time-to-breakdown, (t BD ) results.
Journal ArticleDOI
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
TL;DR: In this article, the dependence of the metal gate work function on the underlying gate dielectric in advanced metal-oxide-semiconductor (MOS) gate stacks was explored.
Journal ArticleDOI
Lucky-electron model of channel hot-electron injection in MOSFET'S
Simon M. Tam,P.K. Ko,Chenming Hu +2 more
TL;DR: In this paper, the authors apply the lucky-electron concept to the modeling of channel hot electron injection in n-channel MOSFET's, although the result can be interpreted in terms of electron temperature as well.
Proceedings ArticleDOI
A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation
TL;DR: In this paper, a dynamic threshold voltage MOSFET (DTMOS) was proposed to extend the lower bound of power supply to ultra-low voltages (06 V and below).