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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
Dynamic threshold pass-transistor logic for improved delay at lower power supply voltages
TL;DR: In this paper, the effects of dynamic threshold voltage on pass-transistor logic were investigated for ultralow power use, from 1.5 down to 0.5 V. The body bias was modulated to adjust the threshold voltage to have different on-and off-state values.
Journal ArticleDOI
Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era
TL;DR: In this article, a spacer lithography technology using a sacrificial layer and a chemical vapor deposition (CVD) spacer layer has been developed, and is demonstrated to achieve sub-40 nm structures with conventional dry etching.
Proceedings ArticleDOI
A parametric study of power MOSFETs
TL;DR: In this paper, the theoretical limitations of V-grooved and double-diffused power MOSFETs are studied using several design parameters as variables, and a new structure is proposed that could raise the power capability by an order of magnitude in very high voltage devices.
Journal ArticleDOI
Effects of temperature and defects on breakdown lifetime of thin SiO/sub 2/ at very low voltages
K.F. Schuegraf,Chenming Hu +1 more
TL;DR: In this paper, the physics of voltage and temperature accelerated breakdown testing of silicon dioxide within the framework of an anode hole injection model which can predict low voltage (3.3 V and below) breakdown lifetime.
Proceedings ArticleDOI
The effect of interconnect scaling and low-k dielectric on the thermal characteristics of the IC metal
TL;DR: In this article, the effect of interconnect scaling and low-k dielectric on the thermal characteristics of the interconnect structures has been characterized for the first time under DC and pulsed current conditions.