C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Patent
Methods of forming semiconductor devices with high-k gate dielectric
Chun-Chieh Lin,Wen-Chin Lee,Chenming Hu,Shang-Chih Chen,Chih-Hao Wang,Fu-Liaog Yang,Yee-Chia Yeo +6 more
TL;DR: In this paper, a method of fabricating an integrated circuit is provided, where a first gate dielectric portion is formed on a substrate in a first transistor region, followed by a second-stage transistor region in a second transistor region.
Proceedings ArticleDOI
Dual work function metal gate CMOS transistors fabricated by Ni-Ti interdiffusion
TL;DR: In this paper, a CMOS metal gate technology which uses a combination of two metals to achieve low and symmetrical threshold voltages for n- and p-channel devices is demonstrated.
Patent
Hybrid fractional-bit systems
Chenming Hu,Guobiao Zhang +1 more
TL;DR: In this article, the authors proposed a hybrid N-ary system, which allows increments of states per cell N by as little as 1 between product generations, which can be used to improve manufacturing yield and endurance lifetime.
Proceedings ArticleDOI
A 30 mips vlsi cpu
B.D. Boschma,D.M. Burns,R. Chin,N.S. Fiduccia,Chenming Hu,M.J. Reed,T.I. Rueth,Francis Schumacher,V. Shen +8 more
TL;DR: A description is given of a VLSI CPU which implements an existing 32-b architecture with a set of 140 instructions, most of which can be executed within one effective clock cycle.
Patent
Heterostructure resistor and method of forming the same
TL;DR: A heterostructure resistor is a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant as discussed by the authors.