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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Oxides grown on textured single-crystal silicon for enhanced conduction
TL;DR: The electrical properties and integrity of oxides grown on textured single-crystal silicon (TSC oxides) are investigated and compared to oxides growing on untextured single crystal silicon (normal oxides), polycrystalline silicon (polyoxides) and polyoxides grown in polysilicon as mentioned in this paper, showing that the TSC oxide exhibited enhanced electron injection in both polarities, reducing the voltage necessary for JG=+1 mA/cm2 from 21 V for normal 230 A oxides to 5 V.
Proceedings ArticleDOI
BSIM-IMG with improved surface potential calculation recipe
Pragya Kushwaha,Chandan Yadav,Harshit Agarwal,Yogesh Singh Chauhan,Jandhyala Srivatsava,Sourabh Khandelwal,Juan Pablo Duarte,Chenming Hu +7 more
TL;DR: In this paper, the improved surface potential calculation in the BSIM-IMG model for FDSOI MOSFETs was reported, and the model showed accurate behavior for C-V and I-V characteristics while keeping smooth behavior for their higher order derivatives.
Journal ArticleDOI
MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range
Journal ArticleDOI
Electromigration: Void Dynamics
TL;DR: In this article, the authors used an in situ observation experiment using an SEM allowing for void detection down to a few nanometers in diameter and found that void growth and migration is strongly correlated with the driving current density.
Proceedings ArticleDOI
SOI MOSFET modeling using an AC conductance technique to determine heating
TL;DR: In this paper, a new SPICE model for SOI MOSFETs is proposed, which takes into account self-heating and uses an AC conductance measurement technique.