C
Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Patent
Semiconductor chip with gate dielectrics for high-performance and low-leakage applications
TL;DR: In this paper, the authors show that both high performance and low leakage current devices can be formed on a single wafer without significant additional processing steps by the formation of an ultra-thin gate dielectric and a high-permittivity gate Dielectric, respectively.
Journal ArticleDOI
Punchthrough diode as the transient voltage suppressor for low-voltage electronics
TL;DR: In this article, the performance of a new punchthrough transient voltage suppressor (TVS) was analyzed with two-dimensional device simulation, and it was shown that it is satisfactory for applications not only at 3 V but even at 1 V.
Proceedings ArticleDOI
30 nm ultra-thin-body SOI MOSFET with selectively deposited Ge raised S/D
Yang-Kyu Choi,Yoo-Chan Jeon,Pushkar Ranade,H. Takenuchi,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +6 more
TL;DR: In this article, an 8-nm ultra-thin-body (UTB) SOI was used for MOSFETs with selectively deposited Ge raised source/drain (S/D) implemented in 8 nm ultra thin-body SOI.
Journal ArticleDOI
Monitoring plasma-process induced damage in thin oxide
Hyungcheol Shin,Chenming Hu +1 more
TL;DR: In this paper, the authors used Fowler-Nordheim stressing to predict the voltage distribution of oxides after plasma etching and resist ashing processes, which can be used for defect detection.
Journal ArticleDOI
Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba,Sr)TiO/sub 3/ thin-film capacitors for Gbit-scale DRAMs
TL;DR: In this article, the reliability of (Ba,Sr)TiO/sub 3/ (BST) thin films was investigated for time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC).