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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Journal ArticleDOI
MOSFET hot-carrier reliability improvement by forward-body bias
TL;DR: In this article, the impact of substrate bias V/sub SUB/ on hot-carrier reliability is presented, and the effects of future scaling are discussed using a quasi-two-dimensional model.
Journal ArticleDOI
Differential voltage amplification from ferroelectric negative capacitance
Asif Islam Khan,Michael J. Hoffmann,Korok Chatterjee,Zhongyuan Lu,Ruijuan Xu,Claudy Serrao,Samuel L. Smith,Lane W. Martin,Lane W. Martin,Chenming Hu,Ramamoorthy Ramesh,Ramamoorthy Ramesh,Sayeef Salahuddin,Sayeef Salahuddin +13 more
TL;DR: In this article, the authors demonstrate that a ferroelectric can cause a differential amplification without requiring such an external energy source, which is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed.
Patent
Suppression of MOSFET gate leakage current
Chenming Hu,Yee-Chia Yeo +1 more
TL;DR: In this article, a method for forming a MOSFET having greatly reduced leakage current between the gate electrode and the channel, source and drain regions was proposed, which requires the use of gate electrode materials having lower electron affinities than the channel.
Patent
Tunneling transistor suitable for low voltage operation
TL;DR: In this paper, the authors describe a tunneling transistor with a gate stack including a metallic gate electrode and a gate dielectric, and a junction that is substantially parallel to an interface between the metallic gate electrodes and the gate dieslectric.
Journal ArticleDOI
Hot-electron induced excess carriers in MOSFET's
TL;DR: In this paper, the existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation.