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Chenming Hu
Researcher at University of California, Berkeley
Publications - 1300
Citations - 60963
Chenming Hu is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Gate oxide. The author has an hindex of 119, co-authored 1296 publications receiving 57264 citations. Previous affiliations of Chenming Hu include Motorola & National Chiao Tung University.
Papers
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Proceedings ArticleDOI
SOI and nanoscale MOSFETs
TL;DR: In this article, the authors proposed a scalable MOSFET with ultra-thin body at 20 nm gate length using low-barrier silicide S/D, with selectively deposited Ge raised S/Ds, on bulk substrate, or with Si-Ge channel.
Proceedings ArticleDOI
MoS 2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS 2 availability
Kai-Shin Li,Bo-Wei Wu,Lain-Jong Li,Ming-Yang Li,Chia-Chin Kevin Cheng,Cho-Lun Hsu,Chang-Hsien Lin,Yi-Ju Chen,Chun-Chi Chen,Chien-Ting Wu,Min-Cheng Chen,Jia-Min Shieh,Wen-Kuan Yeh,Yu-Lun Chueh,Fu-Liang Yang,Chenming Hu +15 more
TL;DR: In this article, a U-shape MoS 2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated, which is a big step forward toward a low-cost multi-layer stacked TMD IC technology.
Proceedings ArticleDOI
Sub-60nm Si tunnel field effect transistors with I on >100 µA/µm
Wei-Yip Loh,Kanghoon Jeon,Chang Yong Kang,Jungwoo Oh,Pratik Patel,Casey Smith,Joel Barnett,Chanro Park,Tiehui Liu,Hsing-Huang Tseng,Prashant Majhi,Raj Jammy,Chenming Hu +12 more
TL;DR: Si-tunneling field effect transistors (TFETs) with a record I on >100 µA/µm and high I on /I off ratio (> 105) at V ds = 1V are reported in this article.
Proceedings ArticleDOI
Modeling the impact of back-end process variation on circuit performance
TL;DR: A Monte Carlo approach is taken using actual process distributions to generate realistic 3-D performance corners and accurate analytical models are used to provide a >3 order of magnitude speedup over simulation techniques.
Journal ArticleDOI
Thin‐film dye laser with etched cavity
Chenming Hu,Seihee Kim +1 more
TL;DR: In this article, a thin-film laser with a Fabry-Perot cavity was described, where the cavity was chemically etch into a (100) cut silicon substrate and filled with rhodamine 6G doped polyurethane.