Institution
STMicroelectronics
Company•Geneva, Switzerland•
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.
Topics: Signal, Transistor, Layer (electronics), Integrated circuit, Voltage
Papers published on a yearly basis
Papers
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06 Apr 2006TL;DR: A phase change memory cell as mentioned in this paper consists of a phase change region of phase change material, a heating element of a resistive material, arranged in contact with the phase change regions and a memory element formed in said phase change area at a contact area with the heating element.
Abstract: A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at a contact area with the heating element. The contact area is in the form of a frame that has a width of sublithographic extent and, preferably, a sublithographic maximum external dimension. The heating element includes a hollow elongated portion which is arranged in contact with the phase change region.
58 citations
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21 May 2003TL;DR: The whole read path from addresses to data output is examined, and several schemes developed to achieve the required high performances are described.
Abstract: The ever-increasing demand for portable equipment is leading to the use of flash memory devices for nonvolatile storage. Fast access time and low power consumption are obviously key requirements. Moreover, multilevel storage techniques are mandatory to reduce the cost per megabit. As a consequence, the READ operation becomes more and more critical, and optimized solutions are needed for almost all circuits involved in the read path. This paper examines the whole read path from addresses to data output, and describes several schemes developed to achieve the required high performances.
58 citations
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08 Sep 1992TL;DR: In this paper, a voltage regulator comprising a first power switch connected between the input terminal and output terminal, a storage condenser connected to the input node via a one-way switch, and a second power switch connecting between the condenser and the output node was designed to maintain the output voltage constant.
Abstract: A voltage regulator comprising a first power switch connected between the input terminal and output terminal; a storage condenser connected to the input terminal via a one-way switch; a second power switch connected between the condenser and the input terminal; and a regulating element connected to the output terminal and driving the power switches in such a manner as to maintain the output voltage constant. For better distributing electric and thermal stress and improving the reliability and working life of the regulator by reducing the interference caused by switching of the two power switches, a drive device is provided between the regulating element and the switches for detecting the input voltage and the voltage of the condenser, and keeping both switches on as long as the input voltage is above two given thresholds, turning off the second switch when the input voltage is higher than the condenser voltage and below the first threshold, and turning off the first switch when the input voltage is lower than the condenser voltage and below the second threshold.
58 citations
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13 Mar 2001TL;DR: This work addresses the rationale for this change, the characteristics of the network processor architecture required to address it, and the software development tools needed in order to improve time-to-market without sacrificing embedded software performance.
Abstract: With the projected explosion of low-cost bandwidth availability, the intensive processing tasks and service hosting will move close to consumers on the "intelligent edge" of the network, where a significant portion of the future storage, processing and network management will take place. We address the rationale for this change, the characteristics of the network processor architecture required to address it, and the software development tools needed in order to improve time-to-market without sacrificing embedded software performance.
58 citations
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TL;DR: In this paper, the authors reveal bidirectional ferromagnetic inductors with an /spl sim/30% to 135% increase in L over the air core value, which is advantageously realized by using single deposition.
Abstract: Size reduction for spiral inductors is investigated. We reveal bidirectional ferromagnetic inductors with an /spl sim/30% to 135% increase in L over the air-core value. This is advantageously realized by using single deposition. The realization uses above-IC techniques and high-magnetization FeHfN laminated films. We also report a quality factor of /spl sim/10 at 1.5 GHz, which is mitigated while realizing high FMR frequency (up to 6 GHz). This leads to considerations on nonmagnetic excess losses. Finally, a surface reduction of 25% to 50% for conventional spirals is demonstrated.
58 citations
Authors
Showing all 17185 results
Name | H-index | Papers | Citations |
---|---|---|---|
Bharat Bhushan | 116 | 1276 | 62506 |
Albert Polman | 97 | 445 | 42985 |
G. Pessina | 84 | 828 | 30807 |
Andrea Santangelo | 83 | 886 | 29019 |
Paolo Mattavelli | 74 | 482 | 19926 |
Daniele Ielmini | 68 | 367 | 16443 |
Jean-François Carpentier | 62 | 459 | 14271 |
Robert Henderson | 58 | 440 | 13189 |
Bruce B. Doris | 56 | 604 | 12366 |
Renato Longhi | 55 | 177 | 8644 |
Aldo Romani | 54 | 425 | 11513 |
Paul Muralt | 54 | 344 | 12694 |
Enrico Zanoni | 53 | 705 | 13926 |
Gaudenzio Meneghesso | 51 | 703 | 12567 |
Franco Zappa | 50 | 274 | 9211 |