STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

Abstract: For the first time, we report a 3D stacked sub-15 nm diameter NanoWire FinFET-like CMOS technology (3D-NWFET) with a new optional independent gate nanowire structure named PhiFET. Extremely high driving currents for 3D-NWFET (6.5 mA/mum for NMOS and 3.3 mA/mum for PMOS) are demonstrated thanks to the 3D configuration using a high-k/metal gate stack. Co-processed reference FinFETs with fin widths down to 6 nm are achieved with record aspect ratios of 23. We show experimentally that the 3D-NWFET, compared to a co-processed FinFET, relaxes by a factor of 2.5 the channel width requirement for a targeted DIBL and improves transport properties. PhiFET exhibits significant performance boosts compared to Independent-Gate FinFET (IG-FinFET): a 2-decade smaller IOFF current and a lower subthreshold slope (82 mV/dec. instead of 95 mV/dec.). This highlights the better scalability of 3D-NWFET and PhiFET compared to FinFET and IG-FinFET, respectively.

A 3×3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology

Abstract: A 3×3 prototype image sensor array consisting of 2µm diameter CMOS avalanche photodiodes with 3-transistor NMOS pixel circuitry is integrated in a 90nm CMOS image sensor technology. The 5µm pixel pitch is the smallest achieved to date and is obtained with <1% crosstalk, 250Hz mean dark count rate (DCR) at 20C, 36% photon detection efficiency at 410nm (PDE) and 107ps FWHM jitter. The small pixel pitch makes it possible to recover the 12.5% fill factor by standard wafer-level microlenses. A 5-stage capacitive charge pump generates the 11V breakdown voltage from a standard 2.5V supply obviating external high voltage generation.

Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

Abstract: A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced.

A 15 mW, 70 kHz 1/f corner direct conversion CMOS receiver

Abstract: This paper describes a fully integrated low noise amplifier (LNA) + mixer + first filtering stage, suitable for direct conversion receivers. Its key feature is a current driven passive mixer loaded by a low impedance. Measurements performed on a 0.18 /spl mu/m CMOS prototype, confirm that this architecture, when compared to a classic one, gives a much smaller flicker noise (70 kHz 1/f corner), together with an excellent noise figure (4.4 dB integrated from 10 kHz to 1.92 MHz), while requiring only 15 mW of power. Moreover, a very good linearity is simultaneously achieved (IIP3=-1 dBm). The main limitation of the present implementation is the bandwidth of the opamp that implements the mixer load. Due to this, IIP3 degrades at higher frequencies (IIP3 about -12 dBm at 10 MHz). This is however not a fundamental limitation.