STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Method and circuit for determining the velocity of a data detector mechanism of a mass storage device, or the like, using a BEMF voltage in the associated voice coil

Abstract: A circuit and method for measuring a back EMF voltage of a voice coil in a mass storage device, or the like, includes an amplifier connected across the coil to produce an output signal proportional to a voltage across the coil and a circuit connected to selectively connect the output signal of the amplifier to a circuit output when a driving current is not applied to said coil. A sample window is generated after drive currents within the coil have been allowed to decay to zero, and between a time during which a PWM signal changes from negative to positive and a time when the PWM waveform crosses a voltage error value.

A test access port (TAP) controller and a method of effecting communication using the same

Abstract: There is disclosed a test access port controller for effecting communications across a chip boundary having a test mode and a diagnostic mode of operation, wherein in the test mode of operation the test data is resultant data from a test operation having an expected and time delayed relationship, and in the diagnostic mode of operation diagnostic data is conveyed both on and off chip in the form of respective independent input and output serial bit streams simultaneously through the test access port controller.

0.13μm SiGe BiCMOS technology for mm-wave applications

Abstract: This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

Abstract: A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 mum, w = 165 nm, and h = 400 nm) with 120-nm gaps. This letter details the design and process flow fabrication steps. Then, the electrical device characteristics are demonstrated, comprising static and dynamic studies around the resonant frequency. Devices enable the comparison of a pure capacitive detection with the RSG-MOSFET-based detection on the same component, showing a 4.3-dB-huge peak. Due to its output signal amplification and in-IC integration potentialities, the RSG-MOSFET-based detection is ideal for any type of nanoelectromechanical structure displacement detection.

First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

Abstract: For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain. Functional 3D inverters with either PMOS or NMOS on the top level are highlighted. Furthermore, Si layer transfer above a 28nm W Metal 1 level of an industrial short loop and the return in a front end environment is presented, confirming the industrial compatibility of CoolCube™ integration.