STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Method of generating successions of pseudo-random bits or numbers

Abstract: A method for generating a succession of pseudo-random numbers includes choosing at least one chaotic map, and choosing a seed for the chaotic map and a number of iterations for the chaotic map. The succession of pseudo-random numbers are generated by executing iteratively generating a pseudo-random number as a function of a final state reached by the chaotic map iterated for the current number of iterations starting from the current seed, and generating a new seed for the chaotic map or a new number of iterations as a function of the final state.

Rf identification device with near-field-coupled antenna

Abstract: An embodiment of a RF identification device is formed by a tag and by a reader. The tag is formed by a processing circuit and a first antenna, which has the function both of transmitting and of receiving data. The reader is formed by a control circuit and by a second antenna, which has the function both of transmitting and of receiving data. The processing circuit is formed by a resonance capacitor, a modulator, a rectifier circuit, a charge-pump circuit and a detection circuit. The antenna of the tag and the processing circuit are integrated in a single structure in completely monolithic form. The first antenna has terminals connected to the input of the rectifier circuit, the output of which is connected to the charge-pump circuit. The charge-pump circuit has an output connected to the detection circuit.

Metallization over tungsten plugs

Abstract: A plug contact process wherein, after contact holes are etched, an adhesion layer (such as Ti/TiN) and a filler metal (such as tungsten) are deposited overall. A two-stage etch is then used: First, the filler metal is etched preferentially with respect to the adhesion layer, until an endpoint signal first indicates that said adhesion layer is exposed. No overetch is used at this stage. Thereafter a nonpreferential etch is used to clear residues of the filler metal, while also uniformly reducing the height of the adhesion layer. This prevents the tops of the plugs in the contact holes from being recessed. Aluminum (or other metal) is then deposited and patterned (using a stack etch to remove the undesired portions of the adhesion layer too) to implement the desired wiring pattern. This process thereby reduces voids, and resulting metallization defects, in a process with high-aspect-ratio contacts. In addition, the residual adhesion layer helps to reduce electromigration.

Method of making a stacked capacitor DRAM cell

Abstract: A capacitor is formed for use with a DRAM storage cell by lying down alternating layers of polycrystalline silicon for the storage node and the ground plate. A buried bit line allows the capacitor area to cover a significant fraction of the cell layout area. The alternating storage node and ground plates of the capacitor are laid down alternately, and connected together as they are formed. The number of interleaved layers which can be used to form the capacitor can easily be varied to suit process requirements.

Circuit for detecting voltage variations in relation to a set value, for devices comprising errors amplifiers

Abstract: A circuit (39) for detecting voltage variations in relation to a set value, for devices (1), more specifically a power supply circuit, comprising an error amplifier (27) fed back by a compensating capacitor (28) which, under steady state operating conditions, is not supplied with current, and, in the presence of transient output voltage (Vo) of the device (1), is supplied with current (DI) proportional to the variation in voltage; the circuit (39) comprising a current sensor (40) connected to the compensating capacitor (28) for detecting the current (DI) through the same; and the output signal of the sensor (40) preferably being supplied to a circuit (43, 44) for limiting the variation in output voltage which, in the event the voltage variation exceeds a given threshold value (VR1), activates a control stage (31) connected to the output of the device.