STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Abstract: Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform. Continuous-wave lasing in strained GeSn alloys is reported at temperatures of up to 100 K. The approach offers a route towards a group-IV-on-silicon laser.

Detection of the distance between an electromagnetic transponder and a terminal

Abstract: A method and apparatus for determining the distance separating an electromagnetic transponder from a terminal generating a magnetic field by a first oscillating circuit, the transponder including a second oscillating circuit, upstream of a rectifying circuit adapted to providing a D.C. voltage. The method includes storing a first information relative to the level of the D.C. voltage when the second oscillating circuit is tuned on a determined frequency; storing a second information relative to the level of the D.C. voltage after having caused a frequency detuning of the second oscillating circuit; and comparing the two stored pieces of information.