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Institution

STMicroelectronics

CompanyGeneva, Switzerland
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Signal & Transistor. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.


Papers
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Proceedings ArticleDOI
07 Jun 2004
TL;DR: The results show the technique is accurate to within 20% of miss rate for uniprocessors and was able to reduce the die area of a multiprocessor chip by a projected 14% over a naive design by accurately sizing caches for each processor.
Abstract: As multiprocessor systems-on-chip become a reality, performance modeling becomes a challenge. To quickly evaluate many architectures, some type of high-level simulation is required, including high-level cache simulation. We propose to perform this cache simulation by defining a metric to represent memory behavior independently of cache structure and back-annotate this into the original application. While the annotation phase is complex, requiring time comparable to normal address trace based simulation, it need only be performed once per application set and thus enables simulation to be sped up by a factor of 20 to 50 over trace based simulation. This is important for embedded systems, as software is often evaluated against many input sets and many architectures. Our results show the technique is accurate to within 20% of miss rate for uniprocessors and was able to reduce the die area of a multiprocessor chip by a projected 14% over a naive design by accurately sizing caches for each processor.

64 citations

Journal ArticleDOI
TL;DR: In this article, the electrical and optical performances of high efficient large area 4 H-SiC Schottky photodiodes working in the photovoltaic regime were reported. And they demonstrate that the high signal-to-noise ratio along with the low operating reverse voltage in spite of the large sensitive area makes them suitable in low power consumption applications requiring high sensitivity down to 250 nm.
Abstract: Ultraviolet light detection has a wide range of scientific and industrial applications. In particular, SiC photodiodes have been proposed because of their robustness even in harsh environments, high quantum efficiency but excellent visible blindness, very low dark current, and high speed. Here, we report on the electrical and optical performances of high efficient large area 4 H-SiC Schottky photodiodes working in the photovoltaic regime. We demonstrate that the high signal-to-noise ratio along with the low operating reverse voltage in spite of the large sensitive area makes them suitable in low power consumption applications requiring high sensitivity down to 250 nm.

64 citations

Proceedings ArticleDOI
16 Feb 2004
TL;DR: After recalling the basic algorithms published by NIST for implementing the hash functions SHA-256 (384, 512), a basic circuit characterized by a cascade of full adder arrays is given and the results obtained through hardware synthesis are exposed, where a comparison between the new circuits is given.
Abstract: After recalling the basic algorithms published by NIST for implementing the hash functions SHA-256 (384, 512), a basic circuit characterized by a cascade of full adder arrays is given. Implementation options are discussed and two methods for improving speed are exposed: the delay balancing and the pipelining. An application of the former is first given, obtaining a circuit that reduces the length of the critical path by a full adder array. A pipelined version is then given, obtaining a reduction of two full adder arrays in the critical path. The two methods are afterwards combined and the results obtained through hardware synthesis are exposed, where a comparison between the new circuits is also given.

64 citations

Patent
14 Jul 1995
TL;DR: In this paper, a method for setting the threshold voltage of a reference memory cell of a memory device is described, the reference memory cells being used as a reference current generator for generating a referencecurrent which is compared by a sensing circuit of the memory device with currents sunk by memory cells to be sensed, belonging to a memory matrix.
Abstract: A method for setting the threshold voltage of a reference memory cell of a memory device is described, the reference memory cell being used as a reference current generator for generating a reference current which is compared by a sensing circuit of the memory device with currents sunk by memory cells to be sensed, belonging to a memory matrix of the memory device. The method comprises a first step in which the reference memory cell is submitted to a change in its threshold voltage, and a second step in which the threshold voltage of the reference memory cell is verified. The second step provides for performing a sensing of the reference memory cell using a memory cell with known threshold voltage belonging to the memory matrix as a reference current generator for generating a current which is compared by the sensing circuit with the current sunk by the reference memory cell.

64 citations

Patent
05 Aug 2014
TL;DR: A transition detection module, formed of comparison elements, processes the sampled input signal at successive time instances so as to detect transitions in the input signal in terms of time as discussed by the authors, and an output module generates detected transitions on multiple parallel outputs.
Abstract: A time to digital converter includes a sample module operable to sample an input signal at multiple different instances of time. A transition detection module, formed of comparison elements, processes the sampled input signal at successive time instances so as to detect transitions in the input signal in terms of time. An output module generates detected transitions in the input signal on multiple parallel outputs.

64 citations


Authors

Showing all 17185 results

NameH-indexPapersCitations
Bharat Bhushan116127662506
Albert Polman9744542985
G. Pessina8482830807
Andrea Santangelo8388629019
Paolo Mattavelli7448219926
Daniele Ielmini6836716443
Jean-François Carpentier6245914271
Robert Henderson5844013189
Bruce B. Doris5660412366
Renato Longhi551778644
Aldo Romani5442511513
Paul Muralt5434412694
Enrico Zanoni5370513926
Gaudenzio Meneghesso5170312567
Franco Zappa502749211
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202225
2021560
2020798
2019952
2018948
2017781