Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Method and apparatus for generating a circular buffer address in integrated circuit that performs multiple communications tasks

Abstract: A circular buffer address generation unit (630) may be accomplished by first determining a potential next address (635) based on a current address (644) and an address offset value (646). Having established the potential next address (635), the potential next address (635) is compared with an ending address (640) of the circular buffer. When the potential next address compared favorably with the ending address, use the potential next address as a new address (650), otherwise generate the new address (650) from a beginning address (642) of the circular buffer.

Frequency selective high impedance surface

Abstract: Disclosed herein are various high-impedance surfaces having high capacitance and inductance properties. One exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, wherein at least a subset of the conductive structures include a plurality of conductive plates arranged along a conductive post so that the conductive plates of one conductive structure interleave with one or more conductive plates of one or more adjacent conductive structure. Another exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, where the conductive structures include one or more fractalized conductive plates having either indentions and/or projections that are coextensive with corresponding projections or indentations, respectively, of one or more adjacent conductive structures. Also disclosed are various exemplary implementations of such high-impedance surfaces.

Electronic, optical, and surface properties of PtSi thin films

Abstract: We report a theoretical and experimental study of thin Pt silicide films. Employing density-functional theory, we investigate the electronic structure, bonding, and optical properties of PtSi and ${\text{Pt}}_{2}\text{Si}$. Additionally, we calculate surface energies for various orientations and terminations of PtSi surfaces. Our results suggest that thermodynamics may play a role in the silicide formation. The complex dielectric function determined by spectroscopic ellipsometry exhibits non-Drude behavior and shows peaks, which are identified with interband transitions in the $5d$ manifold of platinum and compared with theory.

The ITFET: A Novel FinFET-Based Hybrid Device

Abstract: A novel nanoscale hybrid device (the ITFET) comprising a double-gate (DG) FinFET and a single-gate silicon-on-insulator (SOI) MOSFET, with a common gate, is defined and assessed using a process/physics-based compact model [University of Florida DG model (UFDG)] and 3-D numerical simulations. Significantly higher, and variable, on-state current per pitch, relative to the current of the FinFET, can be achieved with a properly designed ITFET, with the off-state current being governed by the body thickness of the (fully depleted) SOI device. The ITFET can be especially advantageous in FinFET circuits that require device ratioing, such as the 6T-static random access memory (SRAM) cell. Outstanding UFDG/Spice3-predicted characteristics of the FinFET-based SRAM cell, with ITFETs used for the pull-down transistors without any area penalty, are presented

Multi-mode method and apparatus for performing digital modulation and demodulation

Abstract: A method of multi-mode communications includes receiving signals from multiple sources at a plurality of sample buffers, referencing the plurality of sample buffers for a first source at one time and referencing the plurality of sample buffers for a second source at another time, and communicating data from the referenced plurality of sample buffers to a processing unit. The processing unit concurrently receives inputs from buffers in the plurality of sample buffers and outputs to other buffers in the plurality of sample buffers.