Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Method and apparatus for generating pseudorandom numbers or for performing data compression in a data processor

Abstract: A method and apparatus for generating pseudo-random numbers or for performing data compression in a data processor (12). In one form, the present invention generates pseudo-random numbers which are used to provide scan input data bits during built-in-self-test (BIST) scan testing. The present invention then performs data compression on the scan output data received back from the circuits under test (73-75). In one embodiment, the BIST scan testing of data processor (12) is performed in a special "background self-test mode". Central processing unit (CPU) 20 is used to generate the pseudo-random numbers and to perform the data compression. CPU 20 also functions as a standard CPU when in a normal operating mode.

22 nm technology compatible fully functional 0.1 μm 2 6T-SRAM cell

Abstract: We demonstrate 22 nm node technology compatible, fully functional 0.1 mum2 6T-SRAM cell using high-NA immersion lithography and state-of-the-art 300 mm tooling. The cell exhibits a static noise margin (SNM) of 220 mV at Vdd=0.9 V. We also present a 0.09 mum2 cell with SNM of 160 mV at Vdd=0.9 V demonstrating the scalability of the design with the same layout. This is the world's smallest 6T-SRAM cell. Key enablers include band edge high-kappa metal gate stacks, transistors with 25 nm gate lengths, thin spacers, novel co-implants, advanced activation techniques, extremely thin silicide, and damascene copper contacts.

Magnetic random access memory array divided into a plurality of memory banks

Abstract: An MRAM device has a new type of memory bank ( 10 ) that includes bit lines ( 21-24 ), a reference line ( 27 ) and digit lines ( 25, 26 ), on intersections of bit lines and digit lines a plurality of magnetic memory cells ( 15-18 ) are arrayed. Bit lines are formed on both sides of the reference line on a substrate. Since each bit line is fabricated closely to the reference line, each cell has substantially the same hysteresis characteristics, which allow the MRAM device to provide a steady operation mode.

Filtering device for use in a phase locked loop controller

Abstract: A phase lock loop (PLL) frequency synthesizer is used in a radiotelephone to provide a reference frequency to a transmitter or a receiver. This particular PLL frequency synthesizer has a wide bandwidth control loop having a high current charge pump (417) and a narrow bandwidth control loop having a low current charge pump (411). A deadzone circuit (413) is used at an output of a phase detector (405) to control the application of an error signal to the high current charge pump (417). Additionally, the PLL frequency synthesizer utilizes a loop filter (419). The loop filter (419) receives two correction signals (409', 415') and provides a single control signal for the VCO (voltage controlled oscillator) (423). The loop filter contains two time constants formed from resistive and capacitive elements. The two time constants control the bandwidth of the two control loops.

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology

Abstract: This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990 mW at a supply of -5.5 V.