Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Feedback reduction for MIMO precoded system by exploiting channel correlation

Abstract: In a closed-loop wireless communication system, a codebook-based precoding feedback compression mechanism is provided to remove redundancy from the precoding feedback that is caused by channel correlation in time and frequency Redundancy due to temporal correlation of the transmission channel is removed by sending precoding feedback only if there is a change in the precoder state for the channel to the receiver Redundancy due to frequency correlation is removed by run length encoding the precoding feedback, thereby compressing the precoding feedback prior in the frequency domain By compressing the precoding feedback, the average rate of precoder feedback is reduced

Conduction band-edge States associated with the removal of d-state degeneracies by the Jahn-Teller effect

Abstract: X-ray absorption spectroscopy (XAS) is used to study band edge electronic structure of high-/spl kappa/ transition metal (TM) and trivalent lanthanide rare earth (RE) oxide gate dielectrics. The lowest conduction band d/sup */-states in TiO/sub 2/, ZrO/sub 2/ and HfO/sub 2/ are correlated with: 1) features in the O K/sub 1/ edge, and 2) transitions from occupied Ti 2p, Zr 3p and Hf 4p states to empty Ti 3d-, Zr 4d-, and Hf 5d-states, respectively. The relative energies of d-state features indicate that the respective optical bandgaps, E/sub opt/ (or equivalently, E/sub g/), and conduction band offset energy with respect to Si, E/sub B/, scale monotonically with the d-state energies of the TM/RE atoms. The multiplicity of d-state features in the Ti L/sub 2,3/ spectrum of TiO/sub 2/, and in the derivative of the O K/sub 1/ spectra for ZrO/sub 2/ and HfO/sub 2/ indicate a removal of d-state degeneracies that results from a static Jahn-Teller effect in these nanocrystalline thin film oxides. Similar removals of d-state degeneracies are demonstrated for complex TM/RE oxides including Zr and Hf titanates, and La, Gd and Dy scandates. Analysis of XAS and band edge spectra indicate an additional band edge state that is assigned Jahn-Teller distortions at internal grain boundaries. These band edges defect states are electronically active in photoconductivity (PC), internal photoemission (IPE), and act as bulk traps in metal oxide semiconductor (MOS) devices, contributing to asymmetries in tunneling and Frenkel-Poole transport that have important consequences for performance and reliability in advanced Si devices.

Method of fabricating a tiered structure using a multi-layered resist stack and use

Abstract: An improved and novel method of forming a tiered structure, such as a T-gate structure, including the fabrication of a stabilized resist layer that provides for the prevention of interlayer intermixing with the deposition of subsequent resist layers. The method includes patterning a base resist layer to provide for an opening which will form the stem of the tiered structure and subsequently stabilizing the resist base layer without deforming the stem opening. Next, a resist stack is deposited on an uppermost surface of the stabilized resist layer. Patterning the resist stack provides for an opening on an uppermost layer or portion, and a reentrant profile in a portion of the resist stack adjacent the stabilized resist layer. Metallization and subsequent removal of the resist layers results in a tiered structure, such as a T-gate structure, formed using only low to medium molecular weight, linear polymeric materials such as those used in positive optical resists in optical lithography.

Method for solder application and reflow

Abstract: A method for applying solder on a substrate (12) comprises the steps of providing a substrate (12) having predefined solder pads (15) and then providing solder spheres (16) for suitable placement on the solder pads. Then applying flux (14) and tacking media (18) between the solder pads (15) and the solder spheres (16) and then placing the solder spheres on the solder pads. Subsequently the solder spheres are heated onto the solder pads of the substrate providing reflowed solder (26) on the solder pads. Then a layer of flux tacking media (28) is applied on the reflowed solder. Next, a component (30 or 40) is placed on the reflowed solder and flux tacking media providing a substrate assembly (10). Finally, the circuit assembly is heated allowing the component to be soldered to the solder pad.

LED driver with dynamic headroom control

Abstract: A voltage source provides an output voltage to drive a plurality of light emitting diode (LED) strings. A LED driver adjusts the level of the output voltage so as to maintain the lowest tail voltage of the LED strings at or near a predetermined threshold voltage so as provide sufficient headroom voltages for current regulators for the LED strings. The LED driver operates in an operational mode and a calibration mode, which can be implemented in parallel with, or part of, the operational mode. During the calibration mode, the LED driver determines, for each LED string, a code value representative of the level of the output voltage necessary to maintain the tail voltage of the corresponding LED string at or near the predetermined threshold voltage. In the operational mode, the code values from the calibration mode are used to control the voltage source to provide an appropriate level for the output voltage.