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Institution

Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..


Papers
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Patent
01 Jun 1993
TL;DR: In this paper, a lock indicator circuit is used to detect when the phase-locked loop circuit has lost lock on an input reference signal, and when such loss has occurred, an override circuit is rendered operative to decrease the voltage appearing at the input of a VCO within the phase locked loop.
Abstract: A circuit (10) for providing recovery of a phase locked loop circuit when lock has been lost has been provided. The circuit includes a lock indicator circuit (24) for detecting when the phase locked loop circuit has lost lock on an input reference signal. When such loss has occurred, an override circuit (28) is rendered operative to decrease the voltage appearing at the input of a VCO within the phase locked loop thereby slowing down the frequency of the VCO and allowing the phase locked loop circuit to recover lock. Further, a logic circuit (30) detects when the voltage appearing at the input of the VCO has fallen below a predetermined threshold voltage and renders the override circuit non-operative.

49 citations

Patent
26 Nov 1990
TL;DR: In this paper, an imagable material is patterned to form a sacrifical plug on a portion of the substrate material, and a substantially planar insulating layer is then deposited over the plug.
Abstract: Self-aligned and/or isolated contacts are formed in a semiconductor device, while simultaneously providing device planarization. In one form, an imagable material is deposited directly on a substrate material. The imagable material is patterned to form a sacrifical plug on a portion of the substrate material. A substantially planar insulating layer is then deposited overlying the substrate material. The plug formed of the imagable material is then removed, thereby exposing a portion of the substrate material and defining a contact opening. A conductive layer is deposited and patterned to complete formation of a contact.

49 citations

Patent
26 May 2006
TL;DR: In this article, a system and method for on-the-fly detection of scene changes within a video stream through statistical analysis of a portion of the macroblocks comprising each video frame as they are processed using inter-frame coding is presented.
Abstract: A system and method for on-the-fly detection of scene changes within a video stream through statistical analysis of a portion of the macroblocks comprising each video frame as they are processed using inter-frame coding. If the statistical analysis of the selected macroblocks of the current frame differs from the previous frame by exceeding predetermined thresholds, the current video frame is assumed to be a scene change. Once a scene change is detected, the remainder of the video frame is encoded as an intra-frame, intra-macroblocks, or intra slices, through implementation of one or more predetermined or adaptively adjusted quantization parameters to reduce computational complexity, decrease power consumption, and increase the resulting video image quality. As decoding is the inverse of encoding, these improvements are similarly recognized by a decoder as it decodes a resulting encoded video stream.

49 citations

Patent
03 Aug 1992
TL;DR: In this paper, a method and apparatus for switching between gain curves of a switched gain voltage controlled oscillator (VCO) 52, 52' or 52' was presented, which utilizes a ring oscillator to select between using a high gain curve and using a low gain curve.
Abstract: A method and apparatus for switching between gain curves of a switched gain voltage controlled oscillator (VCO) 52, 52' or 52" In one form, the present invention uses a switched gain voltage controlled oscillator (VCO) 52, 52' or 52" which utilizes a ring oscillator A Gain Control signal is used to select between using a high gain curve and using a low gain curve The low gain curve is produced by selecting a high resistance path to either power or ground The high gain curve is produced by selecting a low resistance path to either power or ground

49 citations

Proceedings ArticleDOI
01 Jun 2014
TL;DR: In this article, the universality of NBTI and its dependencies on time, bias, temperature, AC frequency and pulse duty cycle across different process integration schemes used in the industry and technology nodes are highlighted.
Abstract: This paper showcases the universality of NBTI and its dependencies on time, bias, temperature, AC frequency and pulse duty cycle across different process integration schemes used in the industry and technology nodes. Strong correlation has been established between device, circuit, and product degradation. Different aspects of variability and variable NBTI in small area devices have been discussed. Features that are important from an industrial perspective are highlighted. Any NBTI model should address these aspects to be considered relevant.

49 citations


Authors

Showing all 7673 results

NameH-indexPapersCitations
David Blaauw8775029855
Krishnendu Chakrabarty7999627583
Rajesh Gupta7893624158
Philippe Renaud7777326868
Min Zhao7154724549
Gary L. Miller6330613010
Paul S. Ho6047513444
Ravi Subrahmanyan5935314244
Jing Shi5322210098
A. Alec Talin5231112981
Chi Hou Chan485119504
Lin Shao4838012737
Johan Åkerman483069814
Philip J. Tobin471866502
Alexander A. Demkov473317926
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20211
20203
201910
201826
201779
2016267