scispace - formally typeset
Search or ask a question
Institution

Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..


Papers
More filters
Patent
04 Feb 1997
TL;DR: In this paper, a method of detecting defective CMOS devices by quiescent current (IDDQ) behavior using a monitor circuit resident in the expendable areas of a die and/or wafer is presented.
Abstract: A method of detecting defective CMOS devices by quiescent current (IDDQ) behavior using a monitor circuit resident in the expendable areas of a die and/or wafer. One embodiment of the present invention incorporates a monitor unit (10) into the scribe grid of a wafer, where pads (2, 3, 4) are built in the corners of the die (5) and connected to the monitor unit (10) via metal connects in the wafer. The monitor unit (10) determines defective die based on IDDQ as expressed by decay of voltage (Vdd) in time, where Vdd is supplied to a die by way of a switch (20) in the monitor unit (10). Alternate embodiments incorporate various configurations and incorporate functional and other tests into a wafer level test system. Other embodiments provide the monitor unit on the die, allowing for later testing and user confirmation.

102 citations

Patent
02 Jun 1995
TL;DR: In this article, a high frequency bypass capacitor (36, 36') is built into a thin-film portion (16, 16') of a polymer carrier substrate (15) of a PBGA.
Abstract: A high frequency bypass capacitor (36, 36') is built into a thin-film portion (16, 16') of a polymer carrier substrate (15) of a PBGA (10). The carrier substrate (15) has both a stiffener (18) and a thin-film portion (16, 16') which has multiple metal layers (24, 28, 30, 32). The power supply planes (28, 30) of these metal layers are used to form built-in bypass capacitors (36, 36'), wherein the power supply planes are specifically designed to be adjacent and parallel layers. An ultra thin film laminate construction provides thin dielectric films (26) between the metal layers to allow the bypass capacitor to be placed very dose to the attached semiconductor die (12) to further reduce parasitic inductance and resistance between die connections (14) and the bypass capacitor. The built-in feature minimizes inherent parasitic series inductance and resistance, thus enabling the filtering of unwanted low pulse width glitches on a power plane connected to VLSI devices at operating frequencies at or above 100 MHz.

101 citations

Patent
30 Jun 2004
TL;DR: In this article, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process.
Abstract: In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.

101 citations

Journal ArticleDOI
TL;DR: In this article, a novel intelligent control law based on the differential flatness theory is proposed to control the input power of the PFC stage which is determined by the charging characteristics of the high-energy battery bank, instead of controlling the intermediate dc-bus voltage at a constant value as done in the conventional controller.
Abstract: AC/DC converters used for charging high-voltage battery banks in electric vehicles from the utility mains, generally, consist of two stages. The first is a power factor correction (PFC) ac/dc boost converter to reduce the input current harmonics injected to the utility grid and convert input ac voltage to an intermediate dc voltage (dc-bus voltage). The second part is an isolated dc/dc converter for providing high-frequency galvanic isolation. This paper presents a novel intelligent control law based on the differential flatness theory to control the input power of the PFC stage which is determined by the charging characteristics of the high-energy battery bank, instead of controlling the intermediate dc-bus voltage at a constant value as done in the conventional controller. Application of the proposed control law to such an ac/dc converter helps improve the dynamic behavior of the input PFC stage compared to the conventional controller and also achieve load adaptive regulation of the intermediate dc-bus voltage. Such load-adaptive dc-bus voltage regulation allows the dc/dc full-bridge converter to operate optimally from no-load to full-load conditions unlike the conventional controller with constant dc-bus voltage which forces the dc/dc full-bridge to operate with very low duty ratios at no-load conditions. Experimental results from a 3-kW ac/dc converter are presented in the paper to validate the proposed control method. The improved converter performance and increased efficiency as compared to the conventional control method proves the superiority of the proposed technique.

99 citations

Patent
29 Mar 1996
TL;DR: In this article, the pilot symbols on the pilot channel are provided to a channel estimator (408) for estimating the channel phase and channel gain of the communication channel, which is then used to demodulate the traffic channel symbols.
Abstract: A receiver circuit (400, 500) receives a spread spectrum communication signal, such as a DS-CDMA signal, including a pilot channel and including a power control designator. The signal is despread and decoded. The pilot symbols on the pilot channel are provided to a channel estimator (408) for estimating the channel phase and channel gain of the communication channel. This estimate is provided to a demodulator (422) for demodulating the traffic channel symbols. The pilot symbols are provided to another channel estimator (410) for estimating channel phase and channel gain for the power control designator. This estimate is provided to a demodulator (424) for demodulating the power control designator. The traffic channel symbols are delayed a predetermined time in a delay element (420) before demodulating. The power control designator is delayed a short time or not at all in a short delay element (418) before demodulation.

99 citations


Authors

Showing all 7673 results

NameH-indexPapersCitations
David Blaauw8775029855
Krishnendu Chakrabarty7999627583
Rajesh Gupta7893624158
Philippe Renaud7777326868
Min Zhao7154724549
Gary L. Miller6330613010
Paul S. Ho6047513444
Ravi Subrahmanyan5935314244
Jing Shi5322210098
A. Alec Talin5231112981
Chi Hou Chan485119504
Lin Shao4838012737
Johan Åkerman483069814
Philip J. Tobin471866502
Alexander A. Demkov473317926
Network Information
Related Institutions (5)
STMicroelectronics
29.5K papers, 300.7K citations

92% related

Texas Instruments
39.2K papers, 751.8K citations

89% related

Intel
68.8K papers, 1.6M citations

87% related

Motorola
38.2K papers, 968.7K citations

86% related

Samsung
163.6K papers, 2M citations

83% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20211
20203
201910
201826
201779
2016267