Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Ball grid device with optically transmissive coating

Abstract: A semiconductor device (10) coupled to ball grid array substrate (11) and encapsulated by an optically transmissive material (29, 31). The ball grid array substrate (11) has conductive interconnects (14) and a semiconductor receiving area (17) on a top surface and solder pads (13) on a bottom surface. An optoelectronic component (24) is mounted on the semiconductor receiving area (17) and encapsulated with the optically transmissive material (29, 31). Solder balls (18) are formed on the solder pads (13).

Led driver with feedback calibration

Abstract: Power management in a light emitting diode (LED) system having a plurality of LED strings is disclosed. A voltage source provides an output voltage to drive a plurality of LED strings. An LED driver implements a feedback mechanism to monitor the tail voltages of the active LED strings to identify the minimum tail voltage and adjust the output voltage of the voltage source based on the lowest tail voltage. A loop calibration module of the LED driver calibrates the feedback mechanism of the LED driver based on a relationship between a digital code value used to generate a particular output voltage and another digital code value generated based on the minimum tail voltage resulting from the particular output voltage.

Interconnection structure for conductive layers

Abstract: An interconnect structure is formed having a substrate (10). A conductive layer (14) is formed overlying the substrate (10). A conductive layer (18) is formed overlying the conductive layer (14). An opening (19) is etched through the conductive layer (18), exposing a top portion of conductive layer (14), and forming a sidewall of the conductive layer (18). An selective isotropic etch procedure is used to laterally recess the sidewall of the conductive layer (18). A sidewall spacer (22) is formed adjacent the sidewall of the conductive layer (18). A conductive layer (24) is formed within opening (19) and adjacent the spacer (22) to form an interconnection between conductive layers (24 and 14). The interconnection is self-aligned, and conductive layer (18) is reliably isolated from the interconnect due to the lateral recessed sidewall of the conductive layer (18).

Method of forming a ferromagnetic memory device

Abstract: A ferromagnetic memory circuit (10) and a ferromagnetic memory device (15) which has a substrate (42). Within the substrate (42), a first current electrode (44) and a second current electrode (46) are formed. A control electrode (50) is formed to control current flow between the first and second current electrodes (44 and 46). A ferromagnetic region (68) is used to store a logic value via magnetic flux. Two conductive layers (62 and 70) and a conductive spacer (78) form a sense conductor for device (15). The sense conductor is used to externally provide the logic value stored in the device (15). A conductive layer (82) forms a program/erase line for altering the logic value stored in the device (15). A logic one or a logic zero is stored in ferromagnetic region (68) depending upon a direction and a magnitude of current flow through conductive layer (82).