Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Method of forming a semiconductor package and structure thereof

Abstract: An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (42, 64) over a mold encapsulant (35, 62). The conductive layer (42, 64) may be electrically coupled using a wire to the leadframe (10, 52) of the semiconductor package (2, 50). The electrical coupling can be performed by wire bonding two device portions (2, 4, 6, 8) of a leadframe (10) together and then cutting the wire bond (32) by forming a groove (40) in the overlying mold encapsulant (35) to form two wires (33). The conductive layer (42) is then electrically coupled to each of the two wires (33). In another embodiment, a looped wire bond (61) is formed on top of a semiconductor die (57). After mold encapsulation, portions of the mold encapsulant (62) are removed to expose portions of the looped wire bond (61). The conductive layer (64) is then formed over the mold encapsulant (62) and the exposed portion of the looped wire bond (61) so that the conductive layer (64) is electrically coupled to the looped wire bond (61).

Ultra wide bandwidth spread-spectrum communications system

Abstract: An ultra wide bandwidth, high speed, spread spectrum communications system uses short wavelets of electromagnetic energy to transmit information through objects such as walls or earth. The communication system uses baseband codes formed from time shifted and inverted wavelets to encode data on a RF signal. Typical wavelet pulse durations are on the order of 100 to 1000 picoseconds with a bandwidth of approximately 8 GHz to 1 GHz, respectively. The combination of short duration wavelets and encoding techniques are used to spread the signal energy over an ultra wide frequency band such that the energy is not concentrated in any particular narrow band (e.g. VHF: 30-300 MHz or UHF: 300-1000 MHz) and is not detected by conventional narrow band receivers so it does not interfere with those communication systems. The use of pulse codes composed of time shifted and inverted wavelets gives the system according to the present invention has a spatial resolution on the order of 1 foot which is sufficient to minimize the negative effects of multipath interference and permit time domain rake processing.

Improved conductivity and mechanism of carrier transport in zinc oxide with embedded silver layer

Abstract: The effects of an embedded silver layer on the electrical and optical properties of zinc oxide (ZnO)/silver (Ag)/zinc oxide (ZnO) layered composite structures on polymer substrates have been investigated. We have engineered transparent conducting oxide structures with greatly improved conductivity. Optical and electrical properties are correlated with Ag thickness. Film thicknesses were determined using Rutherford backscattering spectrometry. Hall effect, four-point probe, and UV-Vis spectrophotometer analyses were used to characterize electrical and optical properties. The results show that carrier concentration, mobility, and conductivity increase with Ag thickness. Increasing Ag thickness from 8to14nm enhances sheet resistance and resistivity by six orders of magnitude. The optical transmittance of the composite structure decreases when compared to a single ZnO layer of comparable thickness. However, a composite with 12nm of Ag provides conductivity and transmittance values that are acceptable for opto...

Broad-band poly-harmonic distortion (PHD) behavioral models from fast automated simulations and large-signal vectorial network measurements

Abstract: We present an optimal experiment design methodology and a superior and fully automated model generation procedure for identifying a class of broad-band multiharmonic behavioral models in the frequency domain. The approach reduces the number of nonlinear measurements needed, minimizes the time to generate the data from simulations, reduces the time to extract the model functions from data, and when used for simulation-based models, takes maximum advantage of specialized simulation algorithms. The models have been subject to extensive validation in applications to real microwave integrated circuits. The derived model is valid for both small and large amplitude drive signals, correctly predicts even and odd harmonics through cascaded chains of functional blocks, simulates accurately load-pull behavior away from 50 /spl Omega/, and predicts adjacent channel power ratio and constellation diagrams in remarkably close agreement to the circuit model from which the behavioral model was derived. The model and excitation design templates for generating them from simulations are implemented in Agilent Technologies' Advanced Design System.

A Single–Chip 10-Band WCDMA/HSDPA 4-Band GSM/EDGE SAW-less CMOS Receiver With DigRF 3G Interface and ${+}$ 90 dBm IIP2

Abstract: This paper describes the design and performance of a 90 nm CMOS SAW-less receiver with DigRF interface that supports 10 WCDMA bands (I, II, III, IV, V, VI, VIII, IX, X, XI) and 4 GSM bands (GSM850, EGSM900, DCS1800, PCS1900). The receiver is part of a single-chip SAW-less transceiver reference platform IC for mass-market smartphones, which has been designed to meet Category 10 HSDPA (High Speed Downlink Packet Access) requirements. The novel receiver core consists of a single-stage transconductance amplifier (TCA) with large gain control range, a current commutating passive mixer enhanced for automatic on chip IIP2 calibration with 25% duty-cycle LO injection and threshold adjust, and current-input complex Direct Coupled Filter (DCF). The low noise TCAs are designed without inductive loads to save area. A self-contained on chip automatic IIP2 calibration system with algorithm routine, implemented in firmware, is used to optimize IIP2 performance. This topology eliminates the external LNA, inter-stage SAW filter and transimpedance amplifier (TZA) in conventional WCDMA designs and results in current drain and die area savings as well as improved noise. The 25% duty-cycle LO injection, with threshold adjustment, into a current driven passive double-balanced mixer results in 3 dB additional gain, lower noise figure and lower intermodulation distortion. Large signal blocking and 1/f noise performance are improved significantly by eliminating the 0 and 180deg LO signal crossover at the mixer. The full receiver achieves 2.2 dB/2.39 dB simplex/duplex NF (with - 24.5 dBm TX leakage), > 90 dBm complex two-tone IIP2, 60 dB gain and - 1/+ 5 dBm half/full-duplex image IIP3. The receiver core consumes only 15.1 mA from a 1.5 V supply.